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    摘要 : Mutations in the DMD gene encoding dystrophin—a critical structural element in muscle cells—cause Duchenne muscular dystrophy (DMD), which is the most common fatal genetic disease. Clustered regularly interspaced short palindrom... 展开

    摘要 : Dystrophinopathy, a common neuromuscular disorder caused by the absence of dystrophin, currently lacks effective treatments. Systemic transplantation of adipose-derived stem cells (ADSCs) is a promising treatment approach, but its... 展开

    摘要 : Dystrophinopathy, a common neuromuscular disorder, includes Duchenne muscular dystrophy (DMD) and Becker muscular dystrophy (BMD). Many researches are currently ongoing to develop curative approaches, which results in an urgent ne... 展开

    [期刊]   Zhu, Yuling   Li, Huan   Lin, Jinfu   Zhang, Cheng   Chen, Menglong   Xu, Min   Li, Jing   Wang, Liang   Feng, Pinning   He, Ruojie   《Disease markers》    2018年2018卷Pt.II期      共11页
    摘要 : Objective. To investigate the ratios of creatine kinase (CK) to aminotransferases as biomarkers of acute liver injury in dystrophinopathy. Methods. C57 and mdx (dystrophic) mice were treated with a hepatotoxic reagent D-galactosam... 展开

    [期刊]   Lin, Jinfu   Liu, Hongxia   Wang, Shulong   Wang, Dong   Wu, Lei   《Nanomaterials》    2022年12卷7期      共10页
    摘要 : This paper mainly studies the hardware implementation of a fully connected neural network based on the 1T1R (one-transistor-one-resistor) array and its application in handwritten digital image recognition. The 1T1R arrays are prep... 展开

    摘要 : Twins with Duchenne muscular dystrophy (DMD) have been widely studied. We report the first rare case of monozygotic triplets with DMD who shared consistent phenotypes, including delayed motor and language milestones, muscle wastin... 展开

    [期刊]   Wu, Lei   Liu, Hongxia   Lin, Jinfu   Wang, Shulong   《IEEE Transactions on Electron Devices》    2021年68卷4期      共5页
    摘要 : Both nonvolatile and volatile characteristics are realized in the same Pt/HfO2/Ti memristor by specific electrical operations. The resistance states of nonvolatile memory hardly change for over 10(5) s, whereas the low resistance ... 展开

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